Using Traditional Wisdom and Goat Dung in Sustainable Textile Fabric Dyeing for Consumer Home Products

Goats are widely recognized as the most common domestic species globally, and have been shown to play a crucial economic role in many developing countries. Moreover, amongst the many resources derived from goats, natural cloth dye is often produced from their dung. Therefore, the research set out to investigate the process of fiber dyeing using goat dung and the subsequent design of consumer home products using the resulting dye. After reviewing natural fibers, cotton was selected as the main fiber for the goat dye experiments. A mixed-methods approach was used to study the traditional wisdom of goat farming and dyeing communities in central Thailand. The findings revealed that cotton fibers have good dye affinity, are cost-effective, and readily available in the country. The dye was produced using goat dung, and the experiment varied five control factors, including water temperature, amount, goat dung type, boiling time, and fiber properties. The results showed that fresh goat manure produced stronger color compared to fermented manure. In the second phase, expert evaluations determined the best design to be a ladybug pattern, rated as suitable, usable, beautiful, and unique (mean = 4.18, SD = 0.81). This study contributes to the Bio/Circular/Green (BCG) economy literature and expands on traditional Thai knowledge and wisdom

Inductance Simulators and Their Application to the 4th Order Elliptic Lowpass Ladder Filter Using CMOS VD-DIBAs

This paper presents inductance simulators using the voltage differencing differential input buffered amplifier (VD-DIBA) as an active building block. Three types of inductance simulators, including floating lossless inductance, series inductance-resistance, and parallel inductance-resistance simulators, are proposed, in addition to their application to the 4th order elliptic lowpass ladder filter. The simple design procedures of these inductance simulators using a circuit block diagram are also given. The proposed inductance simulators employ two VD-DIBAs and two passive elements. The complementary metal oxide semiconductor (CMOS) VD-DIBA used in this design utilizes the multiple-input metal oxide semiconductor (MOS) transistor technique in order to achieve a compact and simple structure with a minimum count of transistors. Thanks to this technique, the VD-DIBA offers high performances compared to the other CMOS structures presented in the literature. The CMOS VD-DIBAs and their applications are designed and simulated in the Cadence environment using a 0.18 mu m CMOS process from Taiwan semiconductor manufacturing company (TSMC). Using a supply voltage of +/- 0.9 V, the linear operation of VD-DIBA is obtained over a differential input range of -0.5 V to 0.5 V. The lowpass (LP) ladder filter realized with the proposed inductance simulators shows a dynamic range (DR) of 80 dB for a total harmonic distortion (THD) of 2% at 1 kHz and a 1.8 V peak-to-peak output. In addition, the experimental results of the floating inductance simulators and their applications are obtained by using VD-DIBA constructed from the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental ones, confirming the advantages of the inductance simulators and their application